@InProceedings{BerniPaesGalv:2018:SpLiIn,
author = "Berni, Luiz Angelo and Paes, T. F. and Galv{\~a}o, E. C. S.",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and
{Universidade Federal da Bahia (UFBA)} and {Universidade Federal
de S{\~a}o Paulo (UNIFESP)}",
title = "Spectroscopy liquid infiltration method for measuring porous
silicon properties",
year = "2018",
organization = "Encontro Nacional de F{\'{\i}}sica da Mat{\'e}ria Condensada
(ENFMC)",
abstract = "Porous silicon can be formed by electrochemical etching in
hydrofluoric acid solution. Due to the large surface area and
photoluminescent properties, porous silicon has attracted the
interest of several areas, such as, microelectronics,
optoelectronics, chemical and biological sensors, batteries, solar
cells and biomedical devices. In the laboratory, porous silicon
was formed by low resistivity p-type monocrystalline silicon
wafers under several conditions of current density, solution
concentration and etching time [1]. In order to measure the
thickness, refractive index and porosity of the porous silicon
layer, it was assembled in the laboratory a system that operates
with the spectroscopy liquid infiltration method. This method is
non-destructive and fast execution, which enables to measure the
properties of the porous layers in few minutes [2]. The method
consists in measuring the reflectance of the porous silicon layer
immersed in two distinct media, for example, air and alcohol. The
analysis of the obtained Fabry-Perot interference spectra allows
to estimate the properties of the porous layer. This work presents
details of the assembled system and results obtained from several
samples. The results obtained with the spectroscopy liquid
infiltration method were also compared with the high-resolution
scanning electron microscopy data.",
conference-location = "Foz do Igua{\c{c}}u, PR",
conference-year = "06-11 maio",
language = "en",
urlaccessdate = "27 abr. 2024"
}